30 GHz Multi-Bit Monolithic Phase Shifters
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 85, 4-7
- https://doi.org/10.1109/mcs.1985.1113627
Abstract
The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.Keywords
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