Uniform doping of channeled-ion implantation

Abstract

This paper describes an apparatus designed to obtain spatial uniformity of channeled‐ion implantation using a parallel‐scanning system. Descriptions of the special sample holder which can be tilted in two directions and a detecting scheme for channeling alignment are also included. This apparatus implanted channeled B ions along the [110] axis of silicon (Si). The variations of the implanted profiles and the breakdown voltages of the fabricated diodes in a wafer are compared with those obtained by random implantation and by channeled‐ion implantation using an angular‐scanning system. High doping uniformity comparable to that of random implantation is obtained reproducibly, proving that channeled‐ion implantation using a parallel‐scanning system can provide a controlled technique for device fabrication.