Short-channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing
- 15 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8), 621-623
- https://doi.org/10.1063/1.91229
Abstract
Short‐channel MOS FET’s are successfully fabricated using Q‐switched ruby laser irradiation on As‐implanted sources and drains. Implantation and laser irradiation are both self‐aligned by the polysilicon gate electrodes. The threshold‐voltage–vs–channel‐length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.Keywords
This publication has 4 references indexed in Scilit:
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- p-n junction formation in boron-deposited silicon by laser-induced diffusionApplied Physics Letters, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978