Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures
- 1 March 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (3), 531-535
- https://doi.org/10.1016/0038-1101(78)90023-0
Abstract
No abstract availableKeywords
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