Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices

Abstract

InAs/Ga_1−xIn_xSb superlattices have been investigated by magneto‐optical and magnetotransport techniques. Band gaps, determined from interband magneto‐optical measurements and from the temperature dependence of the intrinsic carrier concentration, are in the long wavelength infrared region (8.3–12.4 μm) and are in good agreement with gaps calculated from a two‐band model. Both electron and hole effective masses were measured by cyclotron resonance and the electron effective mass is found to be a factor of 4–5 larger than in HgCdTe (the industry standard IR material). This is necessary for reduced dark currents and good optical absorption coefficients in this material.