Iron and the iron-boron complex in silicon

Abstract

Iron has been diffused into p- and n-type silicon containing various concentrations of carbon and oxygen. Apart from the established iron interstitial level and the iron-boron complex, no new centers were detected involving iron complexing with either the carbon or the oxygen. The iron-boron level was shown to dissociate by a recombination-enhanced mechanism and a deep acceptor level of this complex was detected at Ec −0.29 eV, which must be the recombination level rather than the well-established level at Ev +0.1 eV.