High-resolution small-angle x-ray diffraction studies of evaporated silicon and germanium layers
- 14 August 1989
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 22 (8), 1136-1142
- https://doi.org/10.1088/0022-3727/22/8/018
Abstract
Measurements on evaporated single layers and multilayers of silicon and germanium were carried out using a triple-crystal x-ray diffractometer with perfect Si(111) crystals as a monochromator and analyser. The very high resolution of the triple-crystal diffractometer allows a precise determination of the structural and optical parameters of the layers. The parameters were obtained by fitting a modified Parratt model to the experimental data.Keywords
This publication has 16 references indexed in Scilit:
- High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1987
- X-ray scattering from a single-quantum-well heterostructureSemiconductor Science and Technology, 1987
- High-resolution x-ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas-source molecular beam epitaxyApplied Physics Letters, 1986
- X-ray diffraction of multilayers and superlatticesActa Crystallographica Section A Foundations of Crystallography, 1986
- X-ray microscope with multilayer mirrorsApplied Optics, 1986
- Relaxation and diffusion study by small angle neutron scattering technique in amorphous semiconductor superlatticesJournal of Non-Crystalline Solids, 1986
- X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxyJournal of Applied Physics, 1986
- Interdiffusion and chemical ordering in composition-modulated Fe70Si30/Si amorphous thin filmsJournal of Applied Physics, 1985
- Interdiffusion in Si/Ge amorphous multilayer filmsApplied Physics Letters, 1985
- X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interfaceJournal of Applied Physics, 1979