2D magnetodiode sensors based on SOS technology
- 1 June 1996
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 54 (1-3), 584-588
- https://doi.org/10.1016/s0924-4247(97)80019-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Full three-dimensional numerical analysis of multi-collector magnetotransistors with directional sensitivitySensors and Actuators A: Physical, 1995
- A new integrated JFET 3-D magnetic-field sensor in VIP technologySensors and Actuators A: Physical, 1993
- A 3-D vertical hall magnetic-field sensor in CMOS technologySensors and Actuators A: Physical, 1992
- 3-D Magnetic field sensor realized as a lateral magnetotransistor in cmos technologySensors and Actuators A: Physical, 1990
- Integrated 3-D Magnetic sensor based on an n-p-n transistorIEEE Electron Device Letters, 1986
- Bases physiques et performances des nouveaux (micro)capteurs magnétiques à semiconducteurRevue de Physique Appliquée, 1984
- Magnetic-field vector sensor based on a two-collector transistor structureSensors and Actuators, 1982
- Magnetic-field-sensitive multicollector n-p-n transistorsIEEE Transactions on Electron Devices, 1982
- Double-injection phenomena under magnetic field in SOS films: A new generation of magnetosensitive microdevicesIEEE Transactions on Electron Devices, 1981