Absence of Surface States in Oxidized Si
- 18 January 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 26 (3), 138-140
- https://doi.org/10.1103/physrevlett.26.138
Abstract
A simple one-dimensional model of an oxide film on the surface of a semiconductor is used to calculate the surface-state energy as a function of the film width. As this width increases above a critical value, the surface state disappears from the semiconducting gap. Application is made to the Si-Si system, and a semiquantitative estimate of the critical width is given.
Keywords
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