A Nondestructive Measurement of Carrier Concentration in Heavily Doped Semiconducting Materials and Its Application to Thin Surface Layers
- 1 June 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (6), 1826-1827
- https://doi.org/10.1063/1.1702690
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Quantitative Measurement of Semiconductor Homogeneity from Plasma EdgeJournal of Applied Physics, 1962
- Interference Method for Measuring the Thickness of Epitaxially Grown FilmsJournal of Applied Physics, 1961
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957