Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials
Top Cited Papers
- 7 May 2004
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 201 (7), 1443-1452
- https://doi.org/10.1002/pssa.200406798
Abstract
No abstract availableKeywords
This publication has 62 references indexed in Scilit:
- Atomic Layer Deposition Chemistry: Recent Developments and Future ChallengesAngewandte Chemie International Edition, 2003
- Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applicationsMicroelectronic Engineering, 2003
- Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide PrecursorsChemistry of Materials, 2002
- Atomic layer deposition of ZrO2 thin films using a new alkoxide precursorJournal of Non-Crystalline Solids, 2002
- Ultrathin high-K metal oxides on silicon: processing, characterization and integration issuesMicroelectronic Engineering, 2001
- Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxideJournal of Crystal Growth, 2001
- Highly conformal ZrO2 deposition for dynamic random access memory applicationJournal of Applied Physics, 2001
- Atomic Force Microscopy Studies of SnO 2 Thin Film Microstruc tures Deposited by Atomic Layer EpitaxyMicrochimica Acta, 2000
- Atomic layer epitaxyCurrent Opinion in Solid State and Materials Science, 1998
- Hexakis(acetato)oxotetrazinc, a well-tailored molecular model of zinc oxide. An experimental and theoretical investigation of the electronic structure of Zn4O(acetate)6 and ZnO by means of UV and x-ray photoelectron spectroscopies and first principle local density molecular cluster calculationsInorganic Chemistry, 1992