Electronic structure of an InAs monomolecular plane in GaAs

Abstract

The electronic structure of an InAs monomolecular plane in the host GaAs is calculated by a self-consistent pseudopotential method. In this monomolecular-plane–host-crystal system, both electrons and holes are found to be strongly localized near the inserted InAs plane. The inserted InAs plane behaves somewhat like a quantum well. This result successfully explains the observed intense photoluminescence spectra. We also calculate the band structure for a system of two InAs monomolecular planes separated by N monolayers of GaAs. The calculated band gap as a function of GaAs thickness between the two InAs planes is in good agreement with experimental data.