Hole magnetoplasmons in semiconductor heterostructures

Abstract

The hole magnetoplasmon dispersion of GaAs/${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As heterostructures is calculated in a time-dependent Hartree-Fock approximation. We find that cyclotron-resonance positions are significantly shifted by hole-hole interactions and that the hole magnetoplasmon dispersion increases monotonically with wave vector. Both results differ from the case of an electron gas, where cyclotron-resonance-position shifts are forbidden by Kohn’s theorem, and are consequences of strong heavy- and light-hole mixing.