Gap states density in a-Si:H deduced from subgap optical absorption measurement on Schottky solar cells
- 16 June 1984
- journal article
- localized electric-states-and-transition
- Published by Wiley in Physica Status Solidi (a)
- Vol. 83 (2), 617-623
- https://doi.org/10.1002/pssa.2210830225
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Energy dependence of the carrier mobility-lifetime product in hydrogenated amorphous siliconPhysical Review B, 1983
- The effects of band bending on the photoconductivity in a-Si:HPhysica B+C, 1983
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical AbsorptionJapanese Journal of Applied Physics, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981
- Determination of the Optical Constants of Thin Films Using Photoacoustic SpectroscopyJapanese Journal of Applied Physics, 1981
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981
- States in the gap in non-crystalline semiconductorsJournal of Physics C: Solid State Physics, 1980
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980