Vapor Growth of Te-Doped GaxAl1-xSb on GaSb
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6)
- https://doi.org/10.1143/jjap.20.1169
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The Al‐Ga‐Sb Ternary Phase Diagram and Its Application to Liquid Phase Epitaxial GrowthJournal of the Electrochemical Society, 1977
- Composition dependence of the AlxGa1−xSb energy gapsJournal of Applied Physics, 1976
- Growth and Characterization of Al x Ga1 − x SbJournal of the Electrochemical Society, 1975
- Epitaxial vapor growth of gallium antimonideJournal of Crystal Growth, 1971
- Preparation and Properties of AlSb-GaSb Solid Solution AlloysJournal of the Electrochemical Society, 1960