GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
- 1 February 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (2), 188-190
- https://doi.org/10.1109/68.655353
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- GaInNAs lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodesIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1997
- Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diodeElectronics Letters, 1997
- Room temperature continuous-wave photopumped operation of 1.22 [micro sign]m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laserElectronics Letters, 1997
- 1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrorsIEEE Photonics Technology Letters, 1997
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasersApplied Physics Letters, 1993