Microhardness of Indium Nitride Single Crystal Films
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1R)
- https://doi.org/10.1143/jjap.33.90
Abstract
Indium nitride epitaxial layers were grown by microwave-excited metalorganic vapor phase epitaxy. Microhardness of the films was measured. The hardness value has been extracted from the curve of depth of indentation vs the applied load, and determined to be 1000±50 kg/mm2.Keywords
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