Interaction of in Atom Spin-Orbit States with Si(100) Surfaces
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Desorption of a two-state system: Laser probing of gallium atom spin-orbit states from silicon (100)Surface Science, 1988
- AES and LEED studies correlating desorption energies with surface structures and coverages for Ga on Si(100)Surface Science, 1988
- Surface structures and growth mechanism of Ga ON Si(100) determined by LEED and Auger electron spectroscopySurface Science, 1988
- Overlayer energetics from thermal desorption on SiSurface Science, 1987
- Laser probing of gallium atom interactions with silicon(100) surfacesJournal of Vacuum Science & Technology B, 1987
- Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growthSurface Science, 1986
- A one‐dimensional model for the study of the influence of heat, sound, photons, and electron‐hole pairs on the rate of desorptionJournal of Vacuum Science and Technology, 1982
- Microscopic theory of thermal desorption and dissociation processes catalyzed by a solid surfacePhysical Review B, 1980
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978