Room-temperature electroluminescence from Er-doped crystalline Si
- 25 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (17), 2235-2237
- https://doi.org/10.1063/1.111655
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Optical activation and excitation mechanisms of Er implanted in SiPhysical Review B, 1993
- Optical doping of silicon with erbium by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Ic Compatible Processing of Si:Er for optoelectronicsMRS Proceedings, 1993
- Local structure of 1.54-μm-luminescence Er3+ implanted in SiApplied Physics Letters, 1992
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991
- Excitation mechanisms and optical properties of rare-earth ions in semiconductorsPhysical Review Letters, 1991
- Impact excitation of the erbium-related 1.54 μm luminescence peak in erbium-doped InPApplied Physics Letters, 1991
- Optical Activation of Er3+ Implanted in Silicon by Oxygen ImpuritiesJapanese Journal of Applied Physics, 1990
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon FilmsJapanese Journal of Applied Physics, 1990
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985