Saturation of the nonlinear index of refraction in semiconductor-doped glass
- 1 January 1991
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 8 (1), 95-98
- https://doi.org/10.1364/josab.8.000095
Abstract
Interferometric measurements of saturation of the nonlinear index of refraction in a semiconductor-doped glass (Schott OG 550) are reported. The index change, measured at a wavelength of 532 nm, reaches a maximum value of ~1.5 × 10−4 at high intensity. It is shown that the magnitude of the corresponding third-order susceptibility, χ(3), is determined mainly by the absorption change. Furthermore, the effective nonlinearity is dramatically reduced by the darkening effect when the glass is exposed to an intense laser beam.Keywords
This publication has 17 references indexed in Scilit:
- Absorption saturation and photodarkening in semiconductor-doped glassesApplied Physics Letters, 1989
- Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glassesJournal of the Optical Society of America B, 1988
- Nonlinear-optical effects in ion-exchanged semiconductor-doped glass waveguidesJournal of the Optical Society of America B, 1988
- Time-resolved direct observation of Auger recombination in semiconductor-doped glassesApplied Physics Letters, 1987
- Nonlinear optical properties of commercial semiconductor-doped glassesApplied Physics A, 1987
- Efficient degenerate four-wave mixing in an ion-exchanged semiconductor-doped glass waveguideApplied Physics Letters, 1987
- Observation of optical bistability in CdSXSe_1−X-doped glasses with 25-psec switching timeOptics Letters, 1987
- New results on optical phase conjugation in semiconductor-doped glassesJournal of the Optical Society of America B, 1987
- Interferometric measurement of the nonlinear index of refraction, n2, of CdSxSe1−x-doped glassesApplied Physics Letters, 1986
- Degenerate four-wave mixing in semiconductor-doped glassesJournal of the Optical Society of America, 1983