Device physics and technology of complementary silicon MESFET's for VLSI applications
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (12), 2619-2631
- https://doi.org/10.1109/16.158684
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Some CMOS device constraints at low temperaturesIEEE Electron Device Letters, 1985
- Rapid thermal annealing of ion-implanted semiconductorsJournal of Applied Physics, 1984
- Relationship between junction radius and reverse leakage of silicide Schottky-barrier diodesIEEE Transactions on Electron Devices, 1984
- Silicide for contacts and interconnectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Theoretical, practical and analogical limits in ULSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Ion-implanted low-barrier PtSi Schottky-barrier diodesIEEE Transactions on Electron Devices, 1980
- Simple analytical models for the temperature dependent threshold behavior of depletion-mode devicesIEEE Transactions on Electron Devices, 1979
- The dopant density and temperature dependence of hole mobility and resistivity in boron doped siliconSolid-State Electronics, 1978
- The dopant density and temperature dependence of electron mobility and resistivity in n-type siliconSolid-State Electronics, 1977
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974