Recoil implantation and interface mixing: A computer simulation study
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 650-656
- https://doi.org/10.1016/0168-583x(85)90449-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Mechanism of ion beam induced mixing of layered solidsApplied Physics A, 1983
- Rita, a promising monte carlo code for recoil implantationRadiation Effects, 1982
- Ion-beam induced atomic mixing at the Si02/Si interface studied by means of monte carlo simulationRadiation Effects, 1982
- Evolve, a time-dependent monte carlo code to simulate the effects of ion-beam-induced atomic mixingRadiation Effects, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Sputtering of Si with keV Ar+Ions. II. Computer Simulation of Sputter Broadening Due to Ion Bombardment in Depth ProfilingJapanese Journal of Applied Physics, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979
- Computer simulation of atomic mixing during ion bombardmentApplied Physics A, 1975
- Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-FeldZeitschrift für Naturforschung A, 1947