Carrier lifetimes in SiC, studied by time resolved photoluminescence spectroscopy
- 1 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10), 1324-1328
- https://doi.org/10.1016/s0925-9635(97)00107-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layersApplied Physics Letters, 1996
- High quality 4H-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1995
- Long minority carrier lifetimes in 6H SiC grown by chemical vapor depositionApplied Physics Letters, 1995
- Possible lifetime-limiting defect in 6H SiCApplied Physics Letters, 1994
- Photoluminescence determination of the nitrogen doping concentration in 6H-SiCApplied Physics Letters, 1994
- Dynamics of the nitrogen-bound excitons in 6HSiCPhysical Review B, 1994
- Auger lifetimes for excitons bound to neutral donors and acceptors in SiPhysica Status Solidi (b), 1977