Steady-state LPE growth of GaAs
- 30 November 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 26 (1), 13-20
- https://doi.org/10.1016/0022-0248(74)90191-2
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- Some observations of the surface morphologies of GaAs layers grown by liquid phase epitaxyJournal of Crystal Growth, 1973
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- High peak-power LSA operation from epitaxial GaAsIEEE Transactions on Electron Devices, 1970
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- Homogeneous solution grown epitaxial GaAs by tin dopingSolid-State Electronics, 1969
- Theoretical analysis of requirements for crystal growth from solutionJournal of Crystal Growth, 1968
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965
- Room Temperature Chemical Polishing of Ge and GaAsJournal of the Electrochemical Society, 1964