Noise in near-ballistic n+nn+ and n+pn+ gallium arsenide submicron diodes
- 31 May 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5), 437-444
- https://doi.org/10.1016/0038-1101(83)90100-4
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Collision-Free Limit of Near-Thermal Noise in Short Solid-State DiodesPhysica Status Solidi (a), 1982
- Collision-Dominated Limit of Near-Thermal Noise in Short Solid-State DiodesPhysica Status Solidi (a), 1982
- Mobility-Fluctuation 1/f Noise in Nonuniform Nonlinear Samples and in Mesa StructuresPhysica Status Solidi (a), 1982
- Improved theory of ballistic transport in one dimensionElectronics Letters, 1982
- Measurement of J/V characteristics of a GaAs submicron n+-n−-n+ diodeElectronics Letters, 1982
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Quantum approach tonoisePhysical Review A, 1980
- Ballistic electron motion in GaAs at room temperatureElectronics Letters, 1980
- GaAs n+-p−-n+ ballistic structureElectronics Letters, 1980
- The Thermionic Current between Parallel Plane Electrodes; Velocities of Emission Distributed According to Maxwell's LawPhysical Review B, 1921