Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP
- 20 May 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (20), 2237-2239
- https://doi.org/10.1063/1.104937
Abstract
Optically detected microwave‐induced impact ionization of excitons and shallow donors is studied in Yb‐doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.Keywords
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