One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ku-band high efficiency high gain pseudomorphic HEMTElectronics Letters, 1991