Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells
- 1 May 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 431-432, 398-402
- https://doi.org/10.1016/s0040-6090(03)00261-x
Abstract
No abstract availableKeywords
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- The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural propertiesAdvances in Physics, 1969