Electrical properties of the Cu(In,Ga)Se2/ MoSe2/Mo structure
- 1 March 2001
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 67 (1-4), 209-215
- https://doi.org/10.1016/s0927-0248(00)00283-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar CellsJapanese Journal of Applied Physics, 1998
- Chemical and Structural Characterization of Cu(In,Ga)Se2/Mo Interface in Cu(In,Ga)Se2 Solar CellsJapanese Journal of Applied Physics, 1996
- Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition MonitorJapanese Journal of Applied Physics, 1995
- Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cellProgress In Photovoltaics, 1994
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991
- The Role of Carrier Diffusion and Indirect Optical Transitions in the Photoelectrochemical Behavior of Layer Type d-Band SemiconductorsJournal of the Electrochemical Society, 1980