Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy with two growth steps
- 2 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (23), 2929-2931
- https://doi.org/10.1063/1.105854
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasersApplied Physics Letters, 1990
- InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiencyApplied Physics Letters, 1990
- 980 nm diode laser for pumping Er/sup 3+/-doped fiber amplifiersIEEE Photonics Technology Letters, 1990
- Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfacesApplied Physics Letters, 1989
- Extremely high electron mobility in a GaAs-GaxIn1−xP heterostructure grown by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Efficient pump wavelengths of erbium-doped fibre optical amplifierElectronics Letters, 1989
- High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifierElectronics Letters, 1989
- AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowthIEEE Journal of Quantum Electronics, 1987
- Single-Longitudinal-Mode Selfaligned (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985