The temperature characteristics of an H2S-sensitive Pd-gate MOS transistor
- 30 September 1988
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 15 (1), 85-93
- https://doi.org/10.1016/0250-6874(88)85020-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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