Modification of Schottky barriers in silicon by reactive ion etching with NF3

Abstract

Reactive ion etching of silicon with NF₃ gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on p‐Si and decreases it on n‐Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.