Investigations on the damage caused by ion etching of SiO2 layers at low energy and high dose
- 31 January 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (1), 51-55
- https://doi.org/10.1016/0038-1101(77)90033-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- An investigation of RF sputter etched silicon surfaces using helium ion backscatterSolid-State Electronics, 1975
- Application de la gravure ionique a la microelectroniqueMicroelectronics Reliability, 1974
- Low-energy ion bombardment of silicon dioxide films on silicon. II. Inert ambient annealing of degradation in MOS devicesJournal of Applied Physics, 1973
- Low-energy ion bombardment of silicon dioxide films on siliconJournal of Applied Physics, 1973
- Graphical Technique to Determine the Density of Surface States at the Si-SiO[sub 2] Interface of MOS Devices Using the Quasistatic C-V MethodJournal of the Electrochemical Society, 1973
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972