Process optimization of copper MOCVD using modeling experimental design
- 1 October 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 91 (1-4), 129-133
- https://doi.org/10.1016/0169-4332(95)00107-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Chemical Vapor Deposition of Copper for Advanced On-Chip InterconnectsMRS Bulletin, 1994
- Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilaneJournal of Electronic Materials, 1994
- Selectivity in low pressure chemical vapor deposition of copper from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane in the presence of waterMaterials Science and Engineering B, 1994
- Copper CVD chemistry on a reactive substrate: bis(hexafluoroacetylacetonato)copper and hfacH on platinum (111)The Journal of Physical Chemistry, 1993
- Decomposition of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane on, and diffusion of Cu into single crystal and polycrystalline titanium nitrideSurface Science, 1993
- Chemical Vapor Deposition of Copper from Hexafluoroacetylacetonato Copper(I) Vinyltrimethylsilane: Deposition Rates, Mechanism, Selectivity, Morphology, and Resistivity as a Function of Temperature and PressureJournal of the Electrochemical Society, 1993
- Selectivity and Copper Chemical Vapor DepositionJournal of the Electrochemical Society, 1992
- Chemical vapor deposition of copper from 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonateApplied Physics Letters, 1991
- The Sequential Generation of $D$-Optimum Experimental DesignsThe Annals of Mathematical Statistics, 1970