Physical limits of heterostructure field-effect transitors and possibilities of novel quantum field-effect devices
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (9), 1845-1852
- https://doi.org/10.1109/jqe.1986.1073181
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance deviceApplied Physics Letters, 1985
- High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect TransistorsJapanese Journal of Applied Physics, 1985
- Fermi Surface Study of a Semiconductor SuperlatticePublished by Springer Nature ,1985
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982
- One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion LayersPhysical Review Letters, 1982
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- Conductance in Restricted-Dimensionality Accumulation LayersPhysical Review Letters, 1982
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980
- Shubnikov—de Haas Oscillations in a Semiconductor SuperlatticePhysical Review Letters, 1977
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970