Annealing effects in short period Si-Ge strained layer superlattices
- 1 December 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (12), 1166-1170
- https://doi.org/10.1088/0268-1242/3/12/003
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
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