Study of defects in silicon after low energy H+ implantation by DLTS measurements
- 16 March 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 100 (1), 245-249
- https://doi.org/10.1002/pssa.2211000128
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Passivation of laser induced defects in silicon by low energy hydrogen ion implantationApplied Physics A, 1986
- Origin of the defects observed after laser annealing of implanted siliconApplied Physics Letters, 1981
- Primary defects in low-fluence ion-implanted siliconApplied Physics Letters, 1980
- Defect annealing in phosphorus implanted silicon: A D.L.T.S. studyApplied Physics A, 1979
- Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient SpectroscopyJapanese Journal of Applied Physics, 1979
- Electron trap annealing in neutron transmutation doped siliconApplied Physics Letters, 1977
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Substitutional doping of amorphous siliconSolid State Communications, 1975