Coulomb blockade in quasimetallic silicon-on-insulator nanowires
- 6 December 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (23), 3704-3706
- https://doi.org/10.1063/1.125435
Abstract
Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors.Keywords
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