High concentration diffusion of P in Si : a percolation problem ?
- 1 January 1982
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 43 (12), 453-459
- https://doi.org/10.1051/jphyslet:019820043012045300
Abstract
A new model is developed for the high concentration diffusion of phosphorus in silicon : it is shown that the accelerated diffusion in the surface region is due to vacancy percolation between the impurities. The corresponding numerical simulation for a 1 000 °C diffusion is in excellent agreement with the experimental resultKeywords
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