Determination of Fermi-level effect on Si-site distribution in GaAs : Si
- 1 May 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (5), 2254-2257
- https://doi.org/10.1063/1.1663572
Abstract
Silicon‐site distribution in GaAs under the influence of a second dopant was studied by measuring the Si localized vibrational modes and the carrier concentrations of a series of samples. Each sample had the same total Si concentration, [Si], but with different concentrations of a second dopant. Semiquantitative results give a relationship between [SiGa]/ [SiAs] and the concentration of the second dopant which is compared with a calculation based on the thermodynamically predicted Fermi‐level effect as formulated by Longini and Greene.Keywords
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