Dislocation scattering in a two-dimensional electron gas
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- 27 March 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (13), 1707-1709
- https://doi.org/10.1063/1.126143
Abstract
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.Keywords
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