Photoreflectance of InxGa1-xAs/GaAs strained-layer superlattices
- 1 October 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (10), 871-875
- https://doi.org/10.1088/0268-1242/4/10/007
Abstract
Photoreflectance of InGaAs/GaAs strained-layer superlattices is reported and explained based on the discussion of the photomodulation mechanisms and the lineshapes in the superlattice case. It is found that photoreflectance of a superlattice has a mixing lineshape of both first and third derivatives, and the mixing depends strongly on the coupling between the quantised states in adjacent potential wells.Keywords
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