Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 1375-1378
- https://doi.org/10.1016/0022-0248(95)80163-4
Abstract
No abstract availableKeywords
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