The Transverse Magnetoresistance Effect in Indium Antimonide†
- 1 March 1958
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 4 (3), 201-218
- https://doi.org/10.1080/00207215808953839
Abstract
Measurements have been made on a wide range of nearly single crystal specimens at, different, temperatures. While most, of the results can be explained from the measured carrier concentrations and Hall mobilities assuming lattice and impurity scattering, it is found that the magneto-resistance at, liquid air temperature is larger than expectedKeywords
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