Direct writing of regions of high doping on semiconductors by UV-laser photodeposition

1 June 1980

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 36 (11), 916-918
https://doi.org/10.1063/1.91366

Abstract

The direct doping of InP with variable Cd concentrations has been demonstrated in a maskless process with micrometer‐scale spatial control. The process makes use of cw UV‐laser photodeposition of the dopant on a laser‐heated surface.

Keywords

SEMICONDUCTOR MATERIALS, RADIATION EFFECTS, PHOTOCHEMISTRY, DEPOSITION, DOPED MATERIALS, ULTRAVIOLET RADIATION, LASER−RADIATION HEATING, LASERS, INDIUM PHOSPHIDES, CADMIUM, QUANTITY RATIO, SPATIAL DEPENDENCE, CONTROL, SURFACES, INP

This publication has 6 references indexed in Scilit:

Ohmic contact formation on InP by pulsed laser photochemical doping
Applied Physics Letters, 1980
Laser-induced microscopic etching of GaAs and InP
Applied Physics Letters, 1980
Laser photodeposition of metal films with microscopic features
Applied Physics Letters, 1979
Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductors
Applied Physics Letters, 1979
A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
Solid-State Electronics, 1975
Specific contact resistance of metal-semiconductor barriers
Solid-State Electronics, 1971

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