Effects of heat treatments of GaAs on the near-surface distribution of EL2 defects
- 1 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9), 945-947
- https://doi.org/10.1063/1.95937
Abstract
A cluster model is proposed for the midgap state EL2 in GaAs based on a defect reaction similar to that of the thermal donor formation in silicon. Anomalous depth profiles of the EL2 defects in bulk GaAs created by heat treatment have been quantitatively explained, assuming that the EL2 defect is a four point defect cluster. Possible candidates of the point defects are discussed.Keywords
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