Modeling of Source-Gated Transistors in Amorphous Silicon
- 1 January 2005
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 152 (8), G674-G677
- https://doi.org/10.1149/1.1946507
Abstract
The most important advantage of a source-gated transistor compared with a field-effect transistor (FET) is its low saturation voltage and high output impedance. Here we model a reverse biased gated Schottky barrier source in hydrogenated amorphous silicon and show good qualitative agreement between the calculated effect of source geometry and measurements. Furthermore, calculations of electron concentration profiles in the source show why the source-gated transistor in hydrogenated amorphous silicon is more stable than an equivalent FET.Keywords
This publication has 9 references indexed in Scilit:
- Modeling of high-current source-gated transistors in amorphous siliconApplied Physics Letters, 2005
- Simulated operation and properties of source-gated thin-film transistorsIEEE Transactions on Electron Devices, 2004
- Source-gated transistors in hydrogenated amorphous siliconSolid-State Electronics, 2004
- Stable transistors in hydrogenated amorphous siliconApplied Physics Letters, 2004
- Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistorsJournal of Materials Research, 2004
- Source-gated thin-film transistorsIEEE Electron Device Letters, 2003
- Device analysis for a-Si:H thin-film transistors with organic passivation layerIEEE Electron Device Letters, 1998
- Tunneling effective mass in hydrogenated amorphous siliconApplied Physics Letters, 1993
- Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary conditionSolid-State Electronics, 1993