Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2
- 29 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2), 223-228
- https://doi.org/10.1016/0038-1101(88)90131-1
Abstract
No abstract availableKeywords
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