Hydrogenation of GaAs on Si: Effects on diode reverse leakage current
- 17 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (7), 496-498
- https://doi.org/10.1063/1.98378
Abstract
Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5-min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode structures from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si. A reduced Schottky barrier height is exhibited by hydrogenated samples, consistent with As depletion of the surface occurring during the long duration plasma processing.Keywords
This publication has 12 references indexed in Scilit:
- Activation characteristics and defect structure in Si-implanted GaAs-on-SiApplied Physics Letters, 1987
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Hydrogenation of shallow-donor levels in GaAsJournal of Applied Physics, 1986
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- GaAs MESFET ring oscillator on Si substrateIEEE Transactions on Electron Devices, 1985
- Selective patterning of single-crystal GaAs/Ge structures on Si substrates by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1985
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- Nitridization of gallium arsenide surfaces: Effects on diode leakage currentsApplied Physics Letters, 1984
- Summary Abstract: Are they really Schottky barriers after all?Journal of Vacuum Science and Technology, 1982