Pulsed electron-beam annealing of selenium-implanted gallium arsenide
- 1 October 1979
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (7), 546-548
- https://doi.org/10.1063/1.91210
Abstract
Electrical properties of selenium‐implanted gallium arsenide annealed by a single shot of high‐power pulsed electron beams have been investigated by differential Hall‐effect and sheet‐resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron‐beam annealing at an incident energy density of 1.2 J/cm2, independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2–3×1019/cm3, which is difficult to realize by conventional thermal annealing.Keywords
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